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TIP41 / 41A / 41B / 41C Datasheet

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TIP41 / 41A / 41B / 41C Datasheet
NPN Epitaxial Silicon Transistor

Complement to Type TIP42 / 42A / 42B / 42C

Applications: Medium power linear switching applications

Package: TO-220 Type

Package TIP41 / 41A / 41B / 41C

TIP41 / 41A / 41B / 41C Datasheet

Dimension TIP41 / 41A / 41B / 41C

TIP41 / 41A / 41B / 41C Datasheet

ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage TIP41A 60 V
TIP41B 80
TIP41C 100
VCEO Collector-Emitter Voltage TIP41A 60 V
TIP41B 80
TIP41C 100
VEBO Emitter-base voltage 5 V
IC Collector Current (DC) 6 A
ICP Collector Current (Pulse) 10 V
IB Base Current 2 A
Tj Junction Temperature 150 °C
Tstg Storage Temperature Range -65 to 150 °C

Thermal Characteristics
Values are at TC= 25°C unless otherwise noted

SYMBOL PARAMETER VALUE UNIT
PC Collector Dissipation (TC=25°C) 65 V
Collector Dissipation (TA=25°C) 2

Electrical Characteristics
Values are at TC=25°C unless otherwise noted

SYMBOL PARAMETER CONDITIONS MIN. MAX UNIT
VCEO(sus) Collector-Emitter Sustaining Voltage (1) TIP41A IC=30mA, IB=0 60 V
TIP41B 80
TIP41C 100
ICEO Collector Cut-Off Current TIP41A VCE=30V, IB=0 0.7 mA
TIP41B
TIP41C
VCE=60V, IB=0 0.7
ICES Collector Cut-Off Current TIP41A VCE=60V, VEB=0 400 uA
TIP41B VCE=80V, VEB=0 400
TIP41C VCE=100V, VEB=0 400
IEBO Emitter Cut-Off Current VEB=5V, IC=0 1 mA
hFE DC Current Gain (1) VCE=4V, IC=0.3A 30
VCE=4V, IC=3A 15 75
VCE(sat) Collector-Emitter Saturation Voltage (1) IC=6A, IB=600mA 1.5 V
VBE(on) Base-Emitter On Voltage (1) VCE=4V, IC=6A 2.0 V
fT Current Gain Bandwidth Product VCE=10V, IC=500mA,
f=1MHZ
3.0 MHZ
Note:
1. Pulse test: pw ≤ 300 uS, duty cycle ≤ 2%


Typical Performance Characteristics TIP41 / 41A / 41B / 41C

TIP41 / 41A / 41B / 41C Datasheet



datasheet tip 42

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