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2SC5200N Datasheet

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2SC5200N Datasheet

Bipolar Transistors Silicon NPN Triple-Diffused Type

Complementary to 2SA1943

EQUIVALENT: 2N3055, TIP3055, MJ15003, 2SC2922

Applications: Power Amplifiers

Package: TO-3P Type

High collector voltage: VCEO = 230 V (min)

Recommended for 100-W high-fidelity audio frequency amplifier output stage

Manufacture: TOSHIBA Semiconductor

2SC5200N Datasheet

Package 2SC5200N

2SA1943 Datasheet

Marking 2SC5200N

2SC5200N Datasheet

Dimension 2SC5200N

2SC5200N Datasheet

Absolute Maximum Ratings (Note) (Unless otherwise specified, Tc = 25°C)

Characteristics Symbol Rating Unit
Collector-base voltage VCEO 230 V
Collector-emitter voltage VCBO 230
Emitter-base voltage VEBO 5
Collector current (DC)     (Note 1) IC 15 A
Base current IB 1.5
Collector power dissipation PC 150 W
Junction temperature Tj 150 °C
Storage temperature Tstg -55 to 150

Thermal Characteristics

Characteristics Symbol Max Unit
Junction-to-case thermal resistance Rth(j-c) 0.83 °C/W

Static Characteristics (Unless otherwise specified, Tc = 25°C)

Characteristics Symbol Test Condition Min Type Max Unit
Collector cut-off current ICBO VCB = -230 V, IE = 0 A -- -- -5.0 uA
Emitter cut-off current IEBO VEB = -5 V, IC = 0 A -- -- -5.0
Collector-emitter breakdown voltage V(BR)CEO IC = -50 mA, IB = 0 A -230 -- -- V
DC current gain hFE(1) VCE = -5 V, IC = 1 A 80 -- 160 --
hFE(2) VCE = -5 V, IC = 7 A 35 -- --
Collector-emitter saturation voltage VCE(sat) IC = -8 A, IB = 0.8 A -- 0.4 3.0 V
Base-emitter voltage VBE VCE = -5 V, IC = 7 A -- 0.9 1.5

Dynamic Characteristics (Unless otherwise specified, Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit
Transition frequency fT VCE = -5 V, IC = 1 A -- 30 -- MHZ
Collector output capacitance Cob VCB = -10 V, IE = 0 A, f = 1 MHz -- 200 -- pF

Characteristics Curve 2SC5200N

2SC5200N Datasheet

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